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DTSTART;TZID=US/Eastern:20110113T160000
DTEND;TZID=US/Eastern:20110113T170000
SUMMARY:Ultraviolet Photoemission Study of Graphene Crystalline Quality -- Dr. Michael Williams
DESCRIPTION:Departmental Colloquium. Ultraviolet photoemission spectroscopy is used to investigate the growth of epitaxial graphene layers grown by the thermal decomposition of the Si face of 4H SiC (0001). We find that thinner layers of grown material have more pronounced spectral features in the valence band structure of the material.  This result is indicative of a higher ordered surface structure and material quality compared to thicker layers.
LOCATION:Physics 202
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